CY7C1019DV33-10VXI, ИС, SRAM, 1Мбит, 128К x 8бит, 10нс время доступа, параллельный интерфейс, 3В до 3.6В питание, SOJ-32

The CY7C1019DV33-10VXI is a 1MB high-performance CMOS Static Random Access Memory (SRAM) organized as 131072 words by 8-bit. Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enables (OE) and 3-state drivers. This device has an automatic power-down feature that significantly reduces power consumption when deselected. Writing to the device is accomplished by taking chip enable (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins is then written into the location specified on the address pins. Reading from the device is accomplished by taking chip enable and output enable LOW while forcing write enable HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the I/O pins. The eight input/output pins are placed in a high-impedance state when the device is deselected, the outputs are disabled or during a write operation.

• Pin and function-compatible with CY7C1019CV33
• High speed — 10ns
• Low active speed
• Low CMOS standby power
• 2V Data retention
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Center power/ground pinout
• Easy memory expansion with CE and OE

Полупроводники — МикросхемыПамятьSRAM

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