CY62136EV30LL-45ZSXI, ИС, SRAM, 2Мбит, 128К x 16бит, 45нс время доступа, параллельный, 2.2В до 3.6В питание, TSOP-II-44

The CY62136EV30LL-45ZSXI is a 2MB high performance CMOS Static Random Access Memory (SRAM) organized as 128K words by 16-bit. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected. The input/output pins are placed in a high impedance state when: deselected, outputs are disabled, both byte high enable and byte low enable are disabled or during a write operation. If byte low enable is LOW, then data from I/O pins, is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins.

• Very high speed — 45ns
• Pin compatible with CY62136CV30
• Ultralow standby power
• Ultralow active power
• Easy memory expansion with CE and OE
• Automatic power down when deselected
• CMOS for optimum speed/power

Полупроводники — МикросхемыПамятьSRAM

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