IS62WV25616DBLL-45TLI, SRAM, 4 Мбит, 256К x 16бит, 2.5В до 3.6В, TSOP-II, 44 вывод(-ов), 45 нс

The IS62WV25616DBLL-45TLI is a 256K x 16-bit low voltage, ultra low power CMOS Static Random Access Memory (SRAM) fabricated using ISSI’s high performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1 is HIGH (deselected) or when CS2 is low (deselected) or when CS1 is LOW, CS2 is HIGH and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using chip enable and output enable inputs. The active LOW write enable (WE) controls both writing and reading of the memory. A data byte allows upper byte (UB) and lower byte (LB) access.

• High-speed access time — 45ns
• CMOS low power operation
• TTL compatible interface levels
• Single power supply
• Fully static operation — no clock or refresh required
• 3-State outputs
• Data control for upper and lower bytes

Полупроводники — МикросхемыПамятьSRAM

Технические параметры