CY62167EV30LL-45BVXI, SRAM, 16 Мбит, 1М x 16бит, 2.2В до 3.6В, FBGA, 48 вывод(-ов), 45 нс

The CY62167EV30LL-45BVXI is a 16Mb high performance CMOS static RAM organized as 1M words by 16-bits or 2M words by 8-bits. This device features an advanced circuit design that provides an ultra low active current. Ultra low active current is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that reduces power consumption by 99% when addresses are not toggling. Place the device into standby mode when deselected. The input and output pins are placed in a high impedance state when the device is deselected, outputs are disabled, both byte high enable and byte low enable are disabled or a write operation is in progress. To write to the device, take chip enables and write enable input LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins.

• Ultra-low standby power
• Ultra-low active power
• Easy memory expansion with CE1, CE2 and OE
• Automatic power-down when deselected
• CMOS for optimum speed/power

Полупроводники — МикросхемыПамятьSRAM

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