CY62147EV30LL-45ZSXI, SRAM, 4 Мбит, 256К x 16бит, 2.2В до 3.6В, TSOP, 44 вывод(-ов), 45 нс

The CY62147EV30LL-45ZSXI is a 4-Mbit high performance CMOS Static Random Access Memory (SRAM) organized as 256K words by 16-bit. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99% when deselected. To write to the device, take chip enable and write enable inputs LOW. If byte low enable is LOW, then data from I/O pins is written into the location specified on the address pins. If byte high enable is LOW, then data from I/O pins is written into the location specified on the address pins. To read from the device, take chip enable and output enable LOW while forcing the write enable HIGH.

• Very high speed — 45ns
• Pin compatible with CY62147DV30
• Ultralow standby power
• Ultralow active power
• Easy memory expansion with CE and OE
• Automatic power down when deselected
• CMOS for optimum speed/power

Полупроводники — МикросхемыПамятьSRAM

Технические параметры