SST39SF040-70-4I-NHE, Флеш память, NOR, Параллельная NOR, 4 Мбит, 512К x 8бит, LCC, 32 вывод(-ов)

The SST39SF040-70-4I-NHE is a 4MB CMOS multi-purpose Flash Memory manufactured with SSTs proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The device writes with a 4.5 to 5.5V power supply. Featuring high performance byte-program, the device provides a maximum byte-program time of 20µsec. This device uses toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, it has on-chip hardware and software data protection schemes. Designed, manufactured and tested for a wide spectrum of applications, this device is offered with a guaranteed typical endurance of 100000 cycles. Data retention is rated at greater than 100 years.

• Superior reliability
• Low power consumption
• Sector-erase capability — uniform 4Kbyte word sectors
• Fast read access time — 70ns
• Latched address and data
• Automatic write timing — internal VPP generation
• Fast erase and byte-program
• End-of-write detection
• TTL I/O compatibility

Полупроводники — МикросхемыПамятьFLASH

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