AT45DB081E-SSHN-B, Флеш память, последовательная, Последовательная NOR, 8 Мбит, 4096 Страниц x 256Байт, SPI, SOIC

The AT45DB081E-SSHN-B is a 1.7V minimum, serial-interface sequential access Flash Memory, ideally suited for a wide variety of digital voice, image, program code and data storage applications. The AT45DB081E also supports the RapidS serial interface for applications requiring very high speed operation. Its 8650752 bits of memory are organized as 4096 pages of 256 or 264bytes each. In addition to the main memory, this also contains two SRAM buffers of 256/264 bytes each. The buffers allow receiving of data while a page in the main memory is being reprogrammed. Interleaving between both buffers can dramatically increase a systems ability to write a continuous data stream. In addition, the SRAM buffers can be used as additional system scratch pad memory and E2 PROM emulation (bit or byte alterability) can be easily handled with a self-contained three step read-modify-write operation.

• Serial Peripheral Interface (SPI) compatible
• Continuous read capability through entire array
• Low-power read option up to 20MHz
• User configurable page size
• Two fully independent SRAM data buffers (256/264 bytes)
• Flexible programming options
• Flexible erase options
• Program and Erase Suspend/Resume
• 20 Years data retention
• Low-power dissipation

Полупроводники — МикросхемыПамятьFLASH

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