DS1225AB-200+, NVRAM, SRAM, 64 Кбит, 8К x 8бит, 200 нс, EDIP

The DS1225AB-200+ is a 64K non-volatile SRAM in 28 pin EDIP package. It is a 65.536bit, fully static, non-volatile SRAM organized as 8192 words by 8 bits. Each NV SRAM has a self contained lithium energy source and control circuitry which constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption. The NV SRAM can be used in place of existing 8K x 8 SRAMs directly conforming to the popular bytewide 28 pin DIP package. The device matches the pin-out of 2764 EPROM and the 2864 EEPROM allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and additional support circuitry is not required for microprocessor interfacing.

• Supply voltage range from 4.75V to 5.25V
• Operating temperature range from 0°C to 70°C
• Data is automatically protected during power loss
• Directly replaces 8K x 8 volatile static RAM or EEPROM
• Unlimited write cycles
• Low power CMOS
• Read and write access time is 200ns
• Lithium energy source is disconnected to retain freshness until power is applied for the first time

Полупроводники — МикросхемыПамятьЭнергонезависимая RAM

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