IS42S16320D-7BLI, DRAM, 32М х 16бит, 7нс, интерфейс LVTTL, BGA-54

The IS42S16320D-7BLI is a high speed CMOS, dynamic Random Access Memory (RAM) designed to operate in either 3.3 or 2.5V Vdd/Vddq memory systems, depending on the DRAM option. It is internally configured as a quad-bank DRAM with a synchronous interface. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible. The 512Mb SDRAM (536870912-bit) has the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide pre-charge time and the capability to randomly change column addresses on each clock cycle during burst access. A self-timed row pre-charge initiated at the end of the burst sequence is available with the AUTOpre-charge function enabled. Pre-charge one bank while accessing one of the other three banks will hide the pre-charge cycles and provide seamless, high-speed, random-access operation.

• Clock frequency — 143MHz
• Fully synchronous, all signals referenced to a positive clock edge
• Internal bank for hiding row access/pre-charge
• LVTTL interface
• Programmable burst length
• Programmable burst sequence — sequential/interleave
• Auto refresh (CBR)
• Self refresh
• 8K Refresh cycle/64ms
• Random column address every clock cycle
• Programmable CAS latency
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and pre-charge command
• Speed — 7ns

Полупроводники — МикросхемыПамятьDRAM

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