IRFB4229PBF, Транзистор, N-канал 250В 46А [TO-220AB]
180,00 ₽
Efficient N-channel MOSFET for PDP drivers, offering low Rds(on), fast response, and high peak current capability. Купить от FedExpert
The IRFB4229PBF is a HEXFET® single N-channel Power MOSFET designed for sustain, energy recovery and pass switch applications in plasma display panels. It utilizes the latest processing techniques to achieve low ON-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
• Advanced process technology
• Low Qg for fast response
• High repetitive peak current capability for reliable operation
• Short fall and rise times for fast switching
• Repetitive avalanche capability for robustness and reliability
Технические параметры
| Структура | n-канал |
| Максимальное напряжение сток-исток Uси,В | 250 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 46 |
| Максимальное напряжение затвор-исток Uзи макс.,В | 30 |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 0.046 ом при 26a, 10в |
| Максимальная рассеиваемая мощность Pси макс..Вт | 330 |
| Крутизна характеристики, S | 83 |
| Корпус | to220ab |
| Пороговое напряжение на затворе | 3…5 |
| Вес, г | 2.5 |
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