IRF7343PBF, Транзисто, N/P-каналы 55В 4.7А/-3.4А [SO-8]

MOSFET, DUAL NP TUBE 95 Transistor Type MOSFET Transistor Polarity N/P Voltage, Vds Typ 55V Current, Id Cont 4.7A Resistance, Rds On 0.05ohm Voltage, Vgs Rds on Measurement 10V Voltage, Vgs th Typ 1V Case Style SOIC Termination Type SMD Current, Id Cont N Channel 2 4.7A Current, Id Cont P Channel 3.4A Current, Idm Pulse 38A Current, Idm Pulse N Channel 2 38A Current, Idm Pulse P Channel 27A External Depth 5.2mm External Length / Height 1.75mm No. of Pins 8 Pitch, Row 6.3mm Power Dissipation 2W Power, Pd 2W Resistance, Rds on N Channel Max 0.05ohm Resistance, Rds on P Channel Max 0.105ohm SMD Marking F7343 Temperature, Current 25C Temperature, Full Power Rating 25C Temperature, Tj Max 150C Temperature, Tj Min -55C Transistors, No. of 2 Voltage, Vds 2V Voltage, Vds Max 55V Voltage, Vds N Channel 1 55V Voltage, Vds P Channel 1 55V Width, External 4.05mm
Корпус SO-8, Конфигурация и полярность N+P, Максимальное напряжение сток-исток 55 В, Ток стока номинальный при 25°C, без учета ограничений корпуса 4.7 А, Сопротивление открытого канала (мин) 95 мОм

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