Полупроводники — МикросхемыПамятьFLASH
Технические параметры
| Минимальная Рабочая Температура | 0 C |
| Максимальная Рабочая Температура | 70 C |
| Максимальное Напряжение Питания | 3.6В |
| Минимальное Напряжение Питания | 3В |
| Количество Выводов | 48вывод(-ов) |
| Тип Интерфейса ИС | параллельный |
| Время Доступа | 55нс |
| Стиль Корпуса Микросхемы Памяти | TSOP |
| Размер Памяти | 4Мбит |
| Конфигурация Флэш-памяти | 256К x 16бит |
| Линейка Продукции | 3V Parallel NOR Flash Memories |
| Тип Flash Памяти | Параллельная NOR |
| EU RoHS | Compliant |
| ECCN (US) | 3A991.b.1.a |
| Part Status | Active |
| HTS | 8542.32.00.71 |
| Cell Type | NOR |
| Chip Density (bit) | 4M |
| Architecture | Sectored |
| Boot Block | No |
| Block Organization | Symmetrical |
| Address Bus Width (bit) | 18 |
| Sector Size | 4Kbyte x 128 |
| Number of Bits/Word (bit) | 16 |
| Number of Words | 256K |
| Programmability | Yes |
| Timing Type | Asynchronous |
| Max. Access Time (ns) | 55 |
| Maximum Erase Time (s) | 0.1/Chip |
| Maximum Programming Time (ms) | 0.02/Word |
| OE Access Time (ns) | 30 |
| Interface Type | Parallel |
| Minimum Operating Supply Voltage (V) | 3 |
| Typical Operating Supply Voltage (V) | 3.3 |
| Maximum Operating Supply Voltage (V) | 3.6 |
| Programming Voltage (V) | 3 to 3.6 |
| Operating Current (mA) | 30 |
| Program Current (mA) | 30 |
| Minimum Operating Temperature (C) | 0 |
| Maximum Operating Temperature (C) | 70 |
| Supplier Temperature Grade | Commercial |
| Command Compatible | Yes |
| ECC Support | No |
| Erase Suspend/Resume Modes Support | No |
| Simultaneous Read/Write Support | Yes |
| Support of Common Flash Interface | Yes |
| Support of Page Mode | No |
| Minimum Endurance (Cycles) | 10000 |
| Packaging | Tray |
| Supplier Package | TSOP |
| Standard Package Name | SOP |
| Pin Count | 48 |
| Mounting | Surface Mount |
| Package Height | 1.05(Max) |
| Package Length | 12.2(Max) |
| Package Width | 18.5(Max) |
| PCB changed | 48 |
| Lead Shape | Gull-wing |
| Вес, г | 2.188 |



